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LORENZO MODICA
Dottorando
Dipartimento di Ingegneria "Enzo Ferrari"
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Pubblicazioni
2023
- Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs
[Relazione in Atti di Convegno]
Cioni, M.; Giorgino, G.; Chini, A.; Parisi, A.; Cappellini, G.; Modica, L.; Luongo, G.; Miccoli, C.; Castagna, M. E.; Moschetti, M.; Tringali, C.; Iucolano, F.
abstract
The impact of gate and drain leakage on VTH drift and dynamic-RON of 100 V p-GaN gate AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different AlGaN barrier layer designs are characterized by means of DC gate/drain leakage and Pulsed I-V measurements. Results show that a larger gate leakage yields a reduced positive VTH drift under off-state stress at large VDS, coherently with hole injection in the floating p-GaN gate. Conversely, a larger off-state drain leakage current exacerbates the RON degradation at high VDS,stress due to hot-electrons effects. The application of a negative VGS,stress has been demonstrated to solve this issue, thanks to a more pinched-off channel that avoids hot-electrons related issues.