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GIOVANNI GIORGINO

Dottorando
Dipartimento di Ingegneria "Enzo Ferrari"

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Pubblicazioni

2023 - GaN on Si Power and RF Devices and Application [Abstract in Atti di Convegno]
Castagna, M. E.; Marchesi, M.; Miccoli, C.; Moschetti, M.; Giorgino, G.; Cioni, M.; Tringali, C.; Chini, A.; Iucolano, F.
abstract

2023 - Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs [Relazione in Atti di Convegno]
Cioni, M.; Giorgino, G.; Chini, A.; Parisi, A.; Cappellini, G.; Modica, L.; Luongo, G.; Miccoli, C.; Castagna, M. E.; Moschetti, M.; Tringali, C.; Iucolano, F.
abstract

The impact of gate and drain leakage on VTH drift and dynamic-RON of 100 V p-GaN gate AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different AlGaN barrier layer designs are characterized by means of DC gate/drain leakage and Pulsed I-V measurements. Results show that a larger gate leakage yields a reduced positive VTH drift under off-state stress at large VDS, coherently with hole injection in the floating p-GaN gate. Conversely, a larger off-state drain leakage current exacerbates the RON degradation at high VDS,stress due to hot-electrons effects. The application of a negative VGS,stress has been demonstrated to solve this issue, thanks to a more pinched-off channel that avoids hot-electrons related issues.

2023 - Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs [Relazione in Atti di Convegno]
Cioni, M.; Giorgino, G.; Chini, A.; Marletta, G.; Miccoli, C.; Castagna, M. E.; Luongo, G.; Moschetti, M.; Tringali, C.; Iucolano, F.
abstract

In this paper, we investigate the impact of Buffer resistivity and AlGaN barrier design on back-bias stress performed on 100 V p-GaN gate AlGaN/GaN HEMTs. To this end, we compare the results obtained in terms of (i) vertical leakage, (ii) back-bias stress on Transmission Line Measurements (TLM) structures and (iii) back-gating on real transistors. Concerning the latter, a novel test sequence is implemented to monitor the drain current evolution during the stress and evaluate the impact on V TH and R ON parameters after 1000 s stress with V SUB =-50 V. Results indicate that high resistive buffer can significantly reduce the back-bias effect, but also the AlGaN barrier design can affect the parameters drift due to a different two-dimensional electron gas (2DEG) density.

2023 - Improved High Temperature Behaviour of On-Resistance in 100V p-GaN HEMTs [Abstract in Atti di Convegno]
Giorgino, G.; Cioni, M.; Cappellini, G.; Iucolano, F.; Miccoli, C.; Castagna, M. E.; Moschetti, M.; Tringali, C.; Chini, A.
abstract

2023 - Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs [Abstract in Atti di Convegno]
Zagni, N.; Chini, A.; Verzellesi, G.; Cioni, M.; Giorgino, G.; Nicotra, M. C.; Castagna, M. E.; Iucolano, F.
abstract

2023 - Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies [Articolo su rivista]
Giorgino, G.; Cioni, M.; Miccoli, C.; Gervasi, L.; Giuffrida, M. F. S.; Ruvolo, M.; Castagna, M. E.; Cappellini, G.; Luongo, G.; Moschetti, M.; Constant, A.; Tringali, C.; Iucolano, F.; Chini, A.
abstract

2023 - Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress [Abstract in Atti di Convegno]
Cioni, M.; Giorgino, G.; Cappellini, G.; Chini, A.; Miccoli, C.; Castagna, M. E.; Moschetti, M.; Tringali, C.; Iucolano, F.
abstract

2023 - Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs [Relazione in Atti di Convegno]
Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Eloisa Castagna, Maria; Iucolano, Ferdinando
abstract

Gate bias effects on p-GaN power HEMTs stability are primarily investigated in terms of threshold voltage (V T ) drifts. However, applying positive and negative gate bias for long time can also induce ON-resistance (R ON ) instability which is often overlooked in the literature. In this work, we characterize I D -V GS after applying a –6/+6 V gate initialization (VGP) bias for 3000 s at different temperatures and reproduce the same characteristics by means of numerical simulations. The comparison between measurements and simulations allowed attributing the observed R ON dispersion to barrier acceptor traps emitting/capturing holes (injected/removed by the Schottky contact on the p-GaN layer) after V GP = –6/+6 V, respectively. Characterization of I D /R ON transients at different temperatures obtained after initialization at +6 V while keeping a gate baseline bias V GB = –6 V allows extracting an activation energy E A ≈ 0.4 eV. This feature is also reproduced by the simulations, further indicating that the underlying mechanism of R ON increase is the charge of acceptor traps in the barrier mediated by hole removal through the Schottky gate contact on the p-GaN region.